1550nm 10mW 10G DFB Electro-absorption Modulator Laser EAM EML laser diode
Product Description
Product Detail
1. Introduction of 1550nm 10mW 10G DFB Electro-absorption Modulator Laser EAM EML laser diode
The 1550nm 10mW 10G DFB Electro-absorption Modulator Laser EAM EML laser diode integrated with DFB laser diode for 10G bit/s optical transmission, which are fabricated in a hermetically sealed butterfly package. Which built-in modulator, TEC, thermistor, monitor photodiode, optical isolator to secure high quality laser performance. We also have full customer selection of output powers, package types and output fibers of SM fibers. This module complies described in Telcordia GR-468-CORE requirement.
2. Features of 1550nm 10mW 10G DFB Electro-absorption Modulator Laser EAM EML laser diode
High output power(10~100mW);
High-performance, multiquantum well (MQW) distributed-feedback (DFB) laser;
Industry-standard 14PIN butterfly package;
Built-in TEC and optical isolator;
ITU wavelengths available from 1270 nm~1650 nm;
Customer selection of wavelengths.
Reliability: Telcordia GR-468. RoHS
3. Application of 1550nm 10mW 10G DFB Electro-absorption Modulator Laser EAM EML laser diode
LAN, WAN and metro networks;
C/DWDM systems;
Fiber optic sensors;
Laser sources;
CATV systems.
4. Electro-Optical Characteristics(T = 25℃): of 1550nm 10mW 10G DFB Electro-absorption Modulator Laser EAM EML laser diode
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Peak oscillation wavelength | λP | *2 | 1530 | - | 1565 | nm |
Optical Output Power | PO | - | - | 10 | - | mW |
Threshold Current | ITH | CW,Vm=V0 | - | 15 | 30 | mA |
Operating current | IOP | - | 40 | - | 100 | mA |
Forward voltage | VF | CW,If=Iop | - | 1.4 | 2.0 | V |
Modulation voltage | VPP | - | - | 2 | 2.6 | V |
Dispersion penalty | Dp | *1 | - | - | 2.0 | dB |
Extinction ratio | REXT | *2 | 10 | - | - | dB |
Side-mode Suppression Ratio | SMSR | CW | 35 | - | - | dB |
Optical Isolation | - | TC(OP)=-20°C to +70°C | 25 | 35 | - | dB |
Relative Intensity Noise | RIN | CW, output power 5mW | - | - | -120 | dB |
TEC set temperature | Ts | - | 15 | - | 35 | ℃ |
Rise Time | Tr | 20 to 80%*2 | - | 20 | 25 | ps |
Fall Time | Tr | 20 to 80%*2 | - | 20 | 25 | ps |
Monitor Current | Im | CW, IF=IOP, Vm=Vo, VDR=5V | 40 | - | 100 | μA |
Monitor Dark Current | Id | VDR=5V | - | 2 | 100 | nA |
Monitor Capacitance | Ct | VDR=5V | - | 2 | 15 | pF |
TEC Current | ITEC | TL = 25℃, TC = 70℃ | - | - | 1.0 | A |
TEC Voltage | VTEC | TL = 25℃, TC = 70℃ | - | - | 2.4 | V |
Cooler power consumption | Pc | - | - | 2.4 | W | |
Thermistor Resistance | Rth | TC(OP) =+25°C | 9.5 | - | 10.5 | kΩ |
Thermistor B constant | B | - | 3270 | 3450 | 3630 | K |
5. Package drawing&PIN-OUT Definition of 1550nm 10mW 10G DFB Electro-absorption Modulator Laser EAM EML laser diode
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-
PIN
DESIGNATIONS
1 Thermistor
2 Thermistor
3 Laser dc Bias (Cathode)(–)
4 PD Monitor Anode(-)
5 PD Monitor Cathode(+)
6 TEC(+)
7 TEC(-)
8 Modulation(-)
7. Deliver,Shipping And Serving of 1550nm 10mW 10G DFB Electro-absorption Modulator Laser EAM EML laser diode
All products have been tested before shipping out;
All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)
We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);
If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;
If the items are defective, please notify us within 3 days of delivery;
Any items must be returned in their original condition to qualify for a refund or replacement;
The buyer is responsible for all the shipping cost incurred.
8. FAQ
A: we have large wavelengths from 1270nm to 1650nm.
Q: What is the requirement for the output power?A: We have 10mW and 20mW options,we can also customize according to your requirements.
Q: What fiber type would you like?A: SM fiber or PM fiber.