200um InGaAs avalanche photodiodes APDs
Product Description
Product Detail
1. Summary of 200um InGaAs avalanche photodiodes APDs
200um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.
The chip is hermetically sealed in a modified TO package, pigtailed option is also available.
2. Introduction of 200um InGaAs avalanche photodiodes APDs
200um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.
The chip is hermetically sealed in a modified TO package, pigtailed option is also available.
3. Features of 200um InGaAs avalanche photodiodes APDs
Detect range 1100nm-1650nm;
Wide dynamic range;
High responsibility;
Low dark current;
Standard TO-46 package.
4. Application of 200um InGaAs avalanche photodiodes APDs
Optical sensor;
free space optical communications.
5. Absolute Maximum Ratings of 200um InGaAs avalanche photodiodes APDs
Parameter | Symbol | Condition | Min. | Max. | Unit |
PD Reverse voltage | VR | CW | - | VBR | V |
Forward current | IF | CW | - | 10 | mA |
Reverse current | IR | CW | - | 10 | mA |
Operating temperature | TOP | Case temperature | -40 | +85 | ℃ |
Storage temperature | TSTG | Ambient temperature | -40 | +85 | ℃ |
Lead soldering temperture/Time | Ts | - | - | 260/10 | ℃/S |
5. Electro-Optical Characteristics(T=25℃) of 200um InGaAs avalanche photodiodes APDs
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Wavelength range | λ | 1100 | - | 1650 | nm | |
Active area | φ | - | - | 200 | - | um |
Responsibility | Re | M=1,λ=1550nm | 0.80 | - | - | A/W |
Multiplication factor | M | VR=VBR-3, λ=1550nm,φe=1uW | 10 | - | - | - |
Dark current | ID | VR=VBR-3, φe=0 | - | - | 35 | nA |
Reverse breakdown voltage | VBR | ID=10μA, φe=0 | 40 | - | 55 | V |
Bandwidth | BW | -3dB point, M=10, RL=50Ω | - | 1.25 | - | GHz |
Capacitance | C | M=10, φe=0, f=1MHz | - | - | 2 | pF |
6. Package drawing&PIN-OUT Definition(Unit:mm) of 200um InGaAs avalanche photodiodes APDs
7. Deliver,Shipping And Serving of 200um InGaAs avalanche photodiodes APDs
All products have been tested before shipping out;
All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)
We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);
If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;
If the items are defective, please notify us within 3 days of delivery;
Any items must be returned in their original condition to qualify for a refund or replacement;
The buyer is responsible for all the shipping cost incurred.
8. FAQ
A: we have 0.3mm 0.5mm 1mm active area avalanche photodiodes.
Q: What is the requirement for the connector?A: Box Optronics can customize according to your requirements.