500um Large Area InGaAs Avalanche Photodiode Chip
Product Description
Product Detail
1. Summary of 500um Large Area InGaAs Avalanche Photodiode Chip
500um Large Area InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.
2. Introduction of 500um Large Area InGaAs Avalanche Photodiode Chip
500um Large Area InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.
3. Features of 500um Large Area InGaAs Avalanche Photodiode Chip
Detect range 900nm-1650nm;
High speed;
High responsivity;
Low capacitance;
Low dark current;
Top illuminated planar structure.
4. Application of 500um Large Area InGaAs Avalanche Photodiode Chip
Monitoring;
Fiber-optic Instruments;
Data Communications.
5. Absolute Maximum Ratings of 500um Large Area InGaAs Avalanche Photodiode Chip
Parameter | Symbol | Value | Unit |
Maximum forward current | - | 10 | mA |
Maximum voltage Supply | - | VBR | V |
Operating temperature | Topr | -40 to +85 | ℃ |
Storage temperature | Tstg | -55 to +125 | ℃ |
6. Electro-Optical Characteristics(T=25℃) of 500um Large Area InGaAs Avalanche Photodiode Chip
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Wavelength range | λ | 900 | - | 1650 | nm | |
Breakdown Voltage | VBR | Id =10uA | 40 | - | 52 | V |
Temperature coefficient of VBR | - | - | - | 0.12 | - | V/℃ |
Responsivity | R | VR =VBR -3V | 10 | 13 | - | A/W |
Dark current | ID | VBR -3V | - | 0.4 | 10.0 | nA |
Capacitance | C | VR =38V, f=1MHz | - | 8 | - | pF |
Bandwith | Bw | - | - | 2.0 | - | GHz |
7. Dimension Parameter of 500um Large Area InGaAs Avalanche Photodiode Chip
Parameter | Symbol | Value | Unit |
Active area diameter | D | 53 | um |
Bond pad diameter | - | 65 | um |
Die size | - | 250x250 | um |
Die thickness | t | 150±20 | um |
8. Deliver,Shipping And Serving of 500um Large Area InGaAs Avalanche Photodiode Chip
All products have been tested before shipping out;
All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)
We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);
If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;
If the items are defective, please notify us within 3 days of delivery;
Any items must be returned in their original condition to qualify for a refund or replacement;
The buyer is responsible for all the shipping cost incurred.
8. FAQ
A: we have 50um 200um 500um active area InGaAs Avalanche Photodiode Chip.
Q: What is the requirement for the connector?A: Box Optronics can customize according to your requirements.