500um TO CAN InGaAs avalanche photodiodes APDs

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Product Description

500um TO CAN InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

Product Detail

1. Summary of 500um TO CAN InGaAs avalanche photodiodes APDs

500um TO CAN InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.
The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

2. Introduction of 500um TO CAN InGaAs avalanche photodiodes APDs

500um TO CAN InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.
The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

3. Features of 500um TO CAN InGaAs avalanche photodiodes APDs

Detect range 1100nm-1650nm;

Wide dynamic range;

High responsibility;

Low dark current;

Standard TO-46 package.

4. Application of 500um TO CAN InGaAs avalanche photodiodes APDs

Optical sensor;

free space optical communications.

5. Absolute Maximum Ratings of 500um TO CAN InGaAs avalanche photodiodes APDs

Parameter	Symbol	Condition	Min.	Max.	Unit
PD Reverse voltage	VR	CW	-	VBR	V
Forward current	IF	CW	-	10	mA
Reverse current	IR	CW	-	10	mA
Operating temperature	TOP	Case temperature	-40	+85	℃
Storage temperature	TSTG	Ambient temperature	-40	+85	℃
Lead soldering temperture/Time	Ts	-	-	260/10	℃/S

5. Electro-Optical Characteristics(T=25℃) of 500um TO CAN InGaAs avalanche photodiodes APDs

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit
Wavelength range	λ		1100	-	1650	nm
Active area	φ	-	-	500	-	um
Responsibility	Re	M=1,λ=1550nm	0.80	-	-	A/W
Multiplication factor	M	VR=VBR-4, λ=1550nm,φe=1uW	10	-	-	-
Dark current	ID	VR=VBR-4, φe=0	-	60	200	nA
Reverse breakdown voltage	VBR	ID=10μA, φe=0	40	-	55	V
Bandwidth	BW	-3dB point, M=10, RL=50Ω	-	2.5	-	GHz
Capacitance	C	M=10, φe=0, f=1MHz	-	8	-	pF

6. Package drawing&PIN-OUT Definition(Unit:mm) of 500um TO CAN InGaAs avalanche photodiodes APDs

7. Deliver,Shipping And Serving of 500um TO CAN InGaAs avalanche photodiodes APDs

All products have been tested before shipping out;

All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)

We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);

If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;

If the items are defective, please notify us within 3 days of delivery;

Any items must be returned in their original condition to qualify for a refund or replacement;

The buyer is responsible for all the shipping cost incurred.