50um InGaAs Avalanche Photodiode Chip
Product Description
Product Detail
1. Summary of 50um InGaAs Avalanche Photodiode Chip
50um InGaAs Avalanche Photodiode Chip is photodiode with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 900 - 1650nm.
2. Introduction of 50um InGaAs Avalanche Photodiode Chip
50um InGaAs Avalanche Photodiode Chip is photodiode with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 900 - 1650nm.
3. Features of 50um InGaAs Avalanche Photodiode Chip
Detect range 900nm-1650nm;
High speed;
High responsivity;
Low capacitance;
Low dark current;
Top illuminated planar structure.
4. Application of 50um InGaAs Avalanche Photodiode Chip
Monitoring;
Fiber-optic Instruments;
Data Communications.
5. Absolute Maximum Ratings of 50um InGaAs Avalanche Photodiode Chip
| Parameter | Symbol | Value | Unit |
| Maximum forward current | - | 10 | mA |
| Maximum voltage Supply | - | VBR | V |
| Operating temperature | Topr | -40 to +85 | ℃ |
| Storage temperature | Tstg | -55 to +125 | ℃ |
6. Electro-Optical Characteristics(T=25℃) of 50um InGaAs Avalanche Photodiode Chip
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Wavelength range | λ | 900 | - | 1650 | nm | |
| Breakdown Voltage | VBR | Id =10uA | 40 | - | 52 | V |
| Temperature coefficient of VBR | - | - | - | 0.12 | - | V/℃ |
| Responsivity | R | VR =VBR -3V | 10 | 13 | - | A/W |
| Dark current | ID | VBR -3V | - | 0.4 | 10.0 | nA |
| Capacitance | C | VR =38V, f=1MHz | - | 8 | - | pF |
| Bandwith | Bw | - | - | 2.0 | - | GHz |
7. Dimension Parameter of 50um InGaAs Avalanche Photodiode Chip
| Parameter | Symbol | Value | Unit |
| Active area diameter | D | 53 | um |
| Bond pad diameter | - | 65 | um |
| Die size | - | 250x250 | um |
| Die thickness | t | 150±20 | um |
8. Deliver,Shipping And Serving of 50um InGaAs Avalanche Photodiode Chip
All products have been tested before shipping out;
All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)
We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);
If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;
If the items are defective, please notify us within 3 days of delivery;
Any items must be returned in their original condition to qualify for a refund or replacement;
The buyer is responsible for all the shipping cost incurred.
8. FAQ
A: we have 50um 200um 500um active area InGaAs Avalanche Photodiode Chip.
Q: What is the requirement for the connector?A: Box Optronics can customize according to your requirements.