Product Description

50um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 900 to 1700nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

Product Detail

1. Summary of 50um InGaAs avalanche photodiodes APDs

50um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 900 to 1700nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.
The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

2. Introduction of 50um InGaAs avalanche photodiodes APDs

50um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 900 to 1700nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.
The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

3. Features of 50um InGaAs avalanche photodiodes APDs

Detect range 900nm-1700nm;

Wide dynamic range;

High responsibility;

Low dark current;

Standard TO-46 package.

4. Application of 50um InGaAs avalanche photodiodes APDs

Optical sensor;

free space optical communications.

5. Absolute Maximum Ratings of 50um InGaAs avalanche photodiodes APDs

Parameter Symbol Condition Min. Max. Unit
PD Reverse voltage VR CW - 60 V
Forward current IF CW - 3 mA
Operating temperature TOP Case temperature -40 +85
Storage temperature TSTG Ambient temperature -40 +85
Lead soldering temperture/Time Ts - - 260/10 ℃/S

5. Electro-Optical Characteristics(T=25℃) of 50um InGaAs avalanche photodiodes APDs

Parameter Symbol Condition Min. Typ. Max. Unit
Wavelength range λ   900 - 1700 nm
Active area φ - - 50 - um
Responsibility Re M=1,λ=1310nm 0.85 - - A/W
Multiplication factor M VR=VBR-3, λ=1310nm,φe=1uW 10 - - -
Dark current ID VR=VBR-3, φe=0 - - 10 nA
Reverse breakdown voltage VBR ID=10μA, φe=0 40 43 45 V
-3dBm Bandwidth BW M=10, RL= 50Ω 2.0 - - GHz
Capacitance C M=10, φe=0 - - 0.5 pF

6. Package drawing&PIN-OUT Definition(Unit:mm) of 50um InGaAs avalanche photodiodes APDs

7. Deliver,Shipping And Serving of 50um InGaAs avalanche photodiodes APDs

All products have been tested before shipping out;

All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)

We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);

If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;

If the items are defective, please notify us within 3 days of delivery;

Any items must be returned in their original condition to qualify for a refund or replacement;

The buyer is responsible for all the shipping cost incurred.

8. FAQ

Q: What is the active area would you like?

A: we have 0.3mm 0.5mm 1mm active area avalanche photodiodes.

Q: What is the requirement for the connector?

A: Box Optronics can customize according to your requirements.

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